AI Data Center Solutions

Powering High-Density AI Data Centers

Enable efficient AI data centers with advanced power conversion, power management, and protection solutions using SiC, GaN, and silicon technologies from grid to GPU.

AI Data Center Power Infrastructure for the AI Factory Era

Artificial intelligence (AI) is accelerating the transition to megawatt-scale data centers, driving a shift from traditional 48V architectures toward ±400V and 800V high-voltage DC (HVDC) power distribution. Emerging trends such as sidecar power architectures, solid-state transformers (SSTs), battery-backed power systems, and vertical power delivery (VPD) are reshaping how power is delivered from the grid to advanced AI processors. Industry initiatives including the Open Compute Project (OCP) are helping define the requirements for high-efficiency, high-density infrastructure needed to support future AI racks approaching 1 MW and beyond. onsemi addresses these challenges with intelligent power solutions that improve energy efficiency, reduce power conversion losses, and enable scalable AI infrastructure from grid to core.

Built on a comprehensive portfolio of silicon, silicon carbide (SiC), and gallium nitride (GaN) technologies, onsemi delivers a complete power platform spanning AC-DC conversion, HVDC distribution, intermediate bus conversion (IBC), hot-swap protection, and processor power delivery. Key innovations include:

  • ±400V / 800V HVDC architectures that simplify power distribution, reduce copper usage, and improve overall system efficiency. 
  • SST enablement for direct medium-voltage to high-voltage DC conversion, reducing conversion stages and supporting future AI data center microgrids. 
  • Sidecar and rack-scale power architectures that improve overall efficiency beyond traditional power shelf designs and support next-generation compute racks. 
  • VPD solutions leveraging advanced multiphase controllers, Smart Power Stage (SPS) modules, and PowerTrench® T10 MOSFETs to reduce power distribution network losses and improve transient performance for AI accelerators. 
  • 800V hot-swap protection solutions powered by EliteSiC™ combo JFET technology for enhanced reliability in high-power AI systems.

onsemi provides a one-stop solution portfolio featuring EliteSiC™ MOSFETs and CJFETs, PowerTrench® T10 MOSFETs, GaNEXUS™ GaN power devices, multiphase controllers, Smart Power Stage (SPS) modules, PoL regulators, and intelligent protection solutions. These technologies enable higher power density, efficiency, and reliability across modern AI data centers while lowering cooling requirements and total cost of ownership (TCO).

製品

Silicon Carbide (SiC) Cascode JFETs
Our high-performance SiC Cascode JFETs utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET.
Silicon Carbide (SiC) MOSFETs

Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.

There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.

Gallium Nitride (GaN) FETs
GaNEXUSTM Gallium Nitride (GaN) FETs are enhancement‑mode discrete GaN HEMTs that leverage wide‑bandgap material properties to deliver fast switching, low gate and output charge, and superior efficiency compared to silicon power transistors. These characteristics enable higher operating frequencies, reduced magnetics, and increased power density across low/medium, high and ultra-high voltage power conversion applications.
Gallium Nitride (GaN) Integrated Power
GaNEXUSTM Integrated Power includes GaNEXUS Drive, GaNEXUS Smart, and GaNEXUS Control, where each combines a GaN switch together with potential combination of additional features: gate driver, current sensing, protection, and control, in a single device to simplify design, reduce parasitics, and accelerate time to market.
Silicon Carbide (SiC) Combo JFETs
SiC Combo JFET represents a revolutionary advancement, combining our low RDS(on) SiC JFET with a Si MOSFET in a single, compact package.
Low/Medium Voltage MOSFETs
Portfolio of comprehensive range of Low-medium voltage power Mosfets that delivers superior performance and reliability for switching applications. Our cutting-edge PowerTrench® T10 technology delivers industry leading RDS, higher power density, reduced switching losses and better thermal performance.
Gate Drivers
GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.
Converters
NCP3286
40A Stackable Synchronous Buck Regulator with PMBUS Interface
Protected Power Switches
NCP81428
Hot Swap Smart Fuse, 18 V, 0.65 mΩ, 50 A, LQFN32
Controllers
FD5012MNTXG
Dual-Rail, 12-Phase Digital Controller with PMBus
Controllers
FD5001MNTXG
VR13/14 Digital Multiphase Controller with PMBus
Integrated Driver & MOSFET
FDMF5085
Smart Power Stage (SPS) Modules with Integrated Current and Temperature Monitors

Documents

Tutorial
Introducing Vertical GaN Tutorial
Tutorial
Advancing Power Circuits: SiC JFETs in Solid-State Circuit Breakers
Tutorial
GaN Power Architectures Guide
Application Notes
EliteSiC JFET Based High Voltage Hot‐Swap Application
Application Notes
AI Server Fan Drive Applications using NCP81295 and NCP81428 Smart Fuse
Application Notes
Standard Logic ICs as Essential Building Blocks in AI Systems
Application Notes
Choosing the Correct Semiconductor Technology for 800 V
White Papers
Comparing Power Supply Technologies in AI Data Centers and Telecom
Application Notes
Cascode Primer Operation of the SiC Cascode JFET
Application Notes
Using Cascode SiC JFETs in LLC Primary

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FAQs

High-Voltage Direct Current (HVDC): High-voltage direct current power distribution reduces conversion stages and improves efficiency in high-density AI data centers.

Intermediate Bus Converter (IBC): A DC-DC converter that steps distribution bus voltage to an intermediate level for efficient downstream power delivery.

Battery Backup Unit (BBU): An energy storage system that provides temporary backup power during outages or power disturbances.

Capacitor Backup Unit (CBU): An energy storage subsystem that uses capacitors to provide instant backup power and stabilize the power bus during rapid load changes.

Peak Load Shaving Shelf (PLSS): An energy storage subsystem that supplements power supplies during short-term demand spikes.

Point of Load (PoL): The final power conversion stage that delivers the precise voltage required by processors, accelerators and memory devices.

Hot Swap: The ability to add or replace hardware without shutting down a system, supported by circuitry that manages inrush current and protects equipment.

Power Supply Unit (PSU): A power converter that delivers the voltage levels required by servers, storage systems and networking equipment.

Solid-State Transformer (SST): A power electronic device that converts medium-voltage electricity to lower voltages with greater efficiency and control than traditional transformers.

Uninterruptible Power Supply (UPS): A backup power system that provides immediate power during outages until longer-duration backup sources become available.

Smart Power Stage (SPS): An integrated power device that efficiently delivers high current to CPUs, GPUs, ASICs and other compute devices.

eFuse (Electronic Fuse): A semiconductor-based protection device that safeguards electronic systems from overcurrent, overvoltage, short-circuit and inrush-current events.

DC-DC Converter: A power conversion circuit that converts one DC voltage level to another for efficient power distribution and regulation.

Wide-Bandgap (WBG) Semiconductor: Advanced materials such as silicon carbide (SiC) and gallium nitride (GaN) that enable higher efficiency, power density and switching performance than silicon.

Rack Power Density: The amount of electrical power consumed within a server rack, typically measured in kilowatts (kW).

Bus Bar: A conductive power distribution component that efficiently transfers high current between electrical distribution equipment, servers and storage systems in a data center.

Vcore (Core Voltage): The regulated supply voltage delivered to the processing cores of CPUs, GPUs, ASICs and other compute devices. 

AI data centers are designed for extreme compute density and power consumption driven by GPUs and AI‑specific accelerators. Compared to enterprise or HPC data centers, they support hyperscale deployments with rack power scaling from tens of kilowatts today toward hundreds of kilowatts or even megawatt‑class racks, requiring advanced power conversion and distribution architectures.

AI data centers use multi‑stage power architectures including AC‑DC conversion, battery backup, intermediate bus conversion, multiphase DC‑DC regulation, and point‑of‑load (PoL) conversion. This layered approach ensures high efficiency, reliability, and precise voltage regulation for CPUs, GPUs, ASICs, and memory subsystems.

Raising distribution voltage from 12 V to 48 V and toward ±400 V or 800 V HVDC reduces conduction losses, cable size, and conversion stages. Higher‑voltage DC architectures improve power density and efficiency, enabling future AI racks to scale toward hundreds of kilowatts while optimizing space and system cost.

Wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) enable higher switching frequency, lower losses, and higher operating temperatures than silicon. These characteristics allow AI data center power supplies to achieve higher efficiency, greater power density, and reduced cooling requirements.

Hot‑swap and smart fuse solutions enable component replacement without system shutdown, improving uptime and serviceability. They provide inrush current control, fault protection, and telemetry via PMBus, which is especially important in high‑voltage 400 V and 800 V DC bus architectures used in AI data centers.

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