Explore semiconductor solutions for 5G base stations, including power conversion, VRMs, signal conditioning, sensing, and protection to enable higher data rates, wider coverage, and lower latency.
Base stations are the foundation of 5G and future 6G wireless networks, enabling high-speed connectivity, low latency, and reliable communications for mobile broadband, industrial IoT, private networks, and AI-driven applications. As network traffic continues to grow, operators are deploying macro base stations, massive MIMO systems, and small cells to increase capacity, expand coverage, and improve spectral efficiency.
Modern base stations rely on high-efficiency –48 V power architectures and advanced power conversion technologies to meet rising performance and energy-efficiency demands. Wide-bandgap semiconductors, including SiC MOSFETs, SiC Cascode JFETs, and GaN power devices, enable higher power density, lower losses, improved thermal performance, and reduced operating costs. These technologies support next-generation power supplies, RF systems, and distributed network deployments.
A typical base station integrates AC-DC power supplies, baseband units (BBUs), remote radio units (RRUs), active antenna units (AAUs), RF front ends, timing circuits, and PoL power solutions. As networks evolve toward Open RAN and cloud-based architectures, semiconductor solutions for efficient power delivery, precision sensing, protection, and synchronization are becoming essential to ensure scalable, reliable, and future-ready telecom infrastructure.
GaNEXUS™ is onsemi GaN power portfolio, designed to deliver higher efficiency, greater power density, and fast switching performance across modern power architectures.
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High-efficiency LV/MV MOSFETs for telecom base stations, delivering low conduction losses, fast switching, and reliable power conversion for 5G infrastructure.
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The Treo Platform (BCD 65nm) enables the next-generation of power management ICs, sensor interfaces, communications devices and standard products.
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Accurate current measurement for telecom base stations, enabling real-time power monitoring, protection, and optimized system performance.
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Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Explore AI data center power solutions for high-density server racks, 48 V & 800 V HVDC architectures, AC-DC/DC-DC, IBC & PoL power delivery using SiC, GaN, MOSFETs and smart power devices.
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GaN technology enables high-frequency switching, compact power conversion, and improved efficiency. By reducing magnetics size and system footprint, GaN supports higher power density and simplified integration. It is well suited for DC-DC conversion, high-density power supplies, and next-generation telecom platforms where thermal management, scalability, and reduced system size are critical design objectives.
SiC devices reduce switching and conduction losses while supporting higher switching frequencies and improved thermal performance. They are particularly effective in high-voltage AC-DC conversion, PFC, and intermediate bus stages. These characteristics help engineers achieve higher power density, improved energy efficiency, lower cooling requirements, and enhanced reliability in multi-kW telecom power systems.
Future base station designs are being driven by AI-enabled applications, massive IoT deployments, cloud services, industrial automation, and increasing mobile data traffic. These trends are accelerating adoption of massive MIMO, higher-power radio architectures, WBG semiconductors, higher-efficiency power supplies, advanced thermal management, and scalable power delivery systems that support both 5G and future 6G infrastructure.
Massive MIMO systems increase network capacity through large antenna arrays and beamforming techniques, but they significantly increase power consumption, thermal density, and synchronization requirements. Engineers must optimize RF power delivery, thermal management, timing accuracy, and power conversion efficiency while maintaining reliable operation across many transmit and receive channels in outdoor deployment environments.
Advanced 5G features such as beamforming, carrier aggregation, coordinated multipoint transmission, and Time Division Duplex operation require highly accurate synchronization between baseband and radio systems. Technologies such as IEEE 1588v2 Precision Time Protocol (PTP) and SyncE help achieve sub-microsecond timing alignment, improving network reliability, spectral efficiency, mobility performance, and support for emerging private wireless and industrial applications.
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