Energy Storage Solutions for Next-Generation Power Systems

Enabling Reliable & Efficient Energy Storage Systems

onsemi delivers next-generation energy storage solutions for industrial and renewable applications. With EliteSiC power semiconductors, advanced simulation tools, and robust design resources, we enable efficient, reliable, and scalable Battery Energy Storage Systems (BESS).

Overview

With long-term expertise and a leading role in renewable energy generation, power management, and energy conversion, onsemi helps customers worldwide overcome the challenges of Energy Storage Systems (ESS). We deliver innovative solutions for the evolution of the power grid, leveraging advanced products such as silicon carbide (SiC) MOSFETs, IGBT modules, gate drivers, and sensing products. These technologies enable efficient power conversion, reliable energy storage, and optimized system performance for renewable energy and grid applications.

製品

IGBT Modules
NXH600N105L7F5S1HG
IGBT Module, I-type NPC 1050 V, 600 A IGBT
IGBT Modules
NXH800H120L7QDSG
Qdual3 1200 V 800 A Half Bridge IGBT Module
Silicon Carbide (SiC) Modules
NXH003P120M3F2PTNG
Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH007F120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH011F120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH008T120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm, 1200V, M3S, TNPC Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH008P120M3F1PTG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
Silicon Carbide (SiC) MOSFETs

Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.

There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.

IGBTs
Insulated Gate Bipolar Transistors (IGBTs) that offer maximum reliability in high performance power conversion applications.
Gallium Nitride (GaN) FETs
GaNEXUSTM Gallium Nitride (GaN) FETs are enhancement‑mode discrete GaN HEMTs that leverage wide‑bandgap material properties to deliver fast switching, low gate and output charge, and superior efficiency compared to silicon power transistors. These characteristics enable higher operating frequencies, reduced magnetics, and increased power density across low/medium, high and ultra-high voltage power conversion applications.
Gallium Nitride (GaN) Integrated Power
GaNEXUSTM Integrated Power includes GaNEXUS Drive, GaNEXUS Smart, and GaNEXUS Control, where each combines a GaN switch together with potential combination of additional features: gate driver, current sensing, protection, and control, in a single device to simplify design, reduce parasitics, and accelerate time to market.
Gate Drivers
GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Documents

White Papers
Optimizing Residential Solar Energy Systems for Efficiency, Reliability, and Cost
White Papers
Common IGBT Topologies Used in Energy Infrastructure Applications
White Papers
DC-DC Power Conversion Topologies for Battery Energy Storage Systems (BESS)
Application Notes
onsemi EliteSiC Gen 2 1200 V SiC MOSFET M3S Series
White Papers
Enhancing Performance, Efficiency and Safety with SiC Isolated Gate Drivers
Tutorial
Pairing Gate Drivers to EliteSiC Tutorial
Application Notes
Technical Advantages of onsemi's New Elite Power Simulator and Self-Service PLECS Model Generator
Collateral Brochure
シリコンカーバイドの課題を克服し、アプリケーションを成功に導く

Evaluation Boards/Kits

Evaluation Board
SECO-NCD57000-GEVB
Application daughter-card for NCD57000 IGBT gate driver
Evaluation Board
NCP-NCV51561TO2474LGEVB
The NCP5156x are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively.
Evaluation Board
NCP-NCV51152TO2474LGEVB
The NCP/V51152 is a family of isolated single−channel gate driver with 4.5 A / 9 A source and sink peak current respectively.
Evaluation Board
SECO-HVDCDC1362-40W-GEVB
SECO-HVDCDC1362-40W-GEVB is highly efficient and primary-side regulated (PSR) auxiliary power supply targeting HEV and EV automotive power trains.

Design Resources

Tools and resources for your evaluation process.

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System Solution Guides

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Evaluation Boards & Kits

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FAQs

A Battery Energy Storage System stores electrical energy in batteries and releases it when needed to support grid stability, renewable integration, and energy cost optimization. BESS enables peak shaving, backup power, and efficient use of solar and wind energy, making it a foundational technology for modern low‑carbon energy infrastructure.

A typical BESS consists of four core elements: battery packs, a battery management system (BMS), a power conversion system (PCS), and an energy management system (EMS). Together, these blocks ensure safe battery operation, bidirectional power flow, system‑level control, and optimized interaction with the grid or local loads.

Bidirectional operation allows a BESS to both charge and discharge efficiently, supporting functions such as grid balancing, peak shaving, and backup power. Selecting suitable topologies and components is essential because power converters are typically optimized for one dominant power‑flow direction, affecting efficiency and thermal performance.

As BESS power levels increase, higher DC bus voltages reduce current, losses, and cable size. Wide‑bandgap devices such as SiC enable higher switching frequencies, improved efficiency, and better thermal performance, supporting compact, high‑power PCS designs while meeting stringent EMI and safety requirements.

By storing excess solar or wind energy and releasing it during peak demand, BESS smooths renewable intermittency and reduces grid stress. In commercial and residential settings, it also mitigates the impact of high‑power EV charging, enabling more efficient energy utilization and lower operating costs.

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