Energy Storage System

Energy Storage Solutions for Next-Generation Power Systems

Enabling Reliable & Efficient Energy Storage Systems

onsemi delivers next-generation energy storage solutions for industrial and renewable applications. With EliteSiC power semiconductors, advanced simulation tools, and robust design resources, we enable efficient, reliable, and scalable Battery Energy Storage Systems (BESS).

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Overview

onsemi’s long-term expertise and leading role in renewable energy generation, power management, and energy conversion helps customers across the globe handle the challenges of Energy Storage Systems. We create suitable solutions for the evolution of the power grid.

製品

IGBT Modules
NXH600N105L7F5S1HG
IGBT Module, I-type NPC 1050 V, 600 A IGBT
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IGBT Modules
NXH800H120L7QDSG
Qdual3 1200 V 800 A Half Bridge IGBT Module
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Silicon Carbide (SiC) Modules
NXH003P120M3F2PTNG
Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
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Silicon Carbide (SiC) Modules
NXH007F120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package
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Silicon Carbide (SiC) Modules
NXH011F120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package
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Silicon Carbide (SiC) Modules
NXH008T120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm, 1200V, M3S, TNPC Topology, F2 Package
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Silicon Carbide (SiC) Modules
NXH008P120M3F1PTG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
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Silicon Carbide (SiC) MOSFETs
NTBG022N120M3S
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
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Silicon Carbide (SiC) MOSFETs
NTBG023N065M3S
Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L
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IGBTs
FGY4L160T120SWD
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 160 A
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Gate Drivers
NCP51752
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control
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Gate Drivers
NCP51563
5 kVRMS Isolated Dual Channel 4.5/9 A Gate Driver with High Channel-to-Channel Spacing
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Dynamic Personalized will be here

Documents

White Papers
Optimizing Residential Solar Energy Systems for Efficiency, Reliability, and Cost
詳細はこちら
White Papers
Common IGBT Topologies Used in Energy Infrastructure Applications
詳細はこちら
White Papers
DC-DC Power Conversion Topologies for Battery Energy Storage Systems (BESS)
詳細はこちら
Application Notes
onsemi EliteSiC Gen 2 1200 V SiC MOSFET M3S Series
詳細はこちら
White Papers
Enhancing Performance, Efficiency and Safety with SiC Isolated Gate Drivers
詳細はこちら
Tutorial
Pairing Gate Drivers to EliteSiC Tutorial
詳細はこちら
Application Notes
Technical Advantages of onsemi's New Elite Power Simulator and Self-Service PLECS Model Generator
詳細はこちら
Collateral Brochure
シリコンカーバイドの課題を克服し、アプリケーションを成功に導く
詳細はこちら

Evaluation Boards/Kits

Evaluation Board
SECO-NCD57000-GEVB
Application daughter-card for NCD57000 IGBT gate driver
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Evaluation Board
NCP-NCV51561TO2474LGEVB
The NCP5156x are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively.
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Evaluation Board
NCP-NCV51152TO2474LGEVB
The NCP/V51152 is a family of isolated single−channel gate driver with 4.5 A / 9 A source and sink peak current respectively.
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Evaluation Board
SECO-HVDCDC1362-40W-GEVB
SECO-HVDCDC1362-40W-GEVB is highly efficient and primary-side regulated (PSR) auxiliary power supply targeting HEV and EV automotive power trains.
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energy storage system