...
Infrastructure-class Power Semiconductors Empower Next-gen UPS

Our expertise has been encapsulated into an array of optimized power semiconductors supporting key power stage topologies.

Complete End-to-End Supply Chain

Learn more about our full control of the SiC manufacturing value chain.

ソリューション

onsemi’s silicon carbide (SiC) and innovative packaging technologies are the gateway to improved density, reducing system losses and simplifying cooling thus improving overall system reliability across a wide range of mission critical UPS systems. Our system expertise has been encapsulated into an array of optimized power modules supporting all key power stage topologies along with power discretes and tailored isolated gate driver solutions. We recognize the critical nature of UPS systems so have formulated an "infrastructure-class" reliability framework. Our robust physical modeling delivers predictable simulation results that reflect real world operation, thus accelerates development time.

Block Diagram

Have Questions?

Have questions, comments, or need support with your energy Infrastructure needs? We’d love to chat!

Subscribe to Updates

Interested in receiving the latest updates on onsemi’s Energy Infrastructure technologies? Subscribe now so you get the information first!

UPS by Type

Offline & Online UPS

UPS and other energy-storage systems incorporating batteries can ensure continuous power availability for residential, telecommunications, data centers, industrial, medical, and other critical equipment.

Learn More
SiC Modules

Full SiC & Hybrid SiC Modules

Our package technologies optimized for

  • Superior performance
  • Lower thermal resistance than discrete devices
  • Easy to mount packages to fit industry standard pinouts

onsemi SiC Diode Families

Family

Voltages

Opitmized For

Best Application

D1

View

650V, 1200V, 1700V

Large die size so low RTH and highest surge current ratings

  • Vienna rectifier input stages

More Details

D2

View

650V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

D3

View

1200V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

Show More

1-25 of 25

Products per page

1

2

3

4

Jump to :

onsemi SiC MOSFET Families

Family

Voltages

Opitmized For

Best Application

M1

View

1200V, 1700V

Large die size so low RTH


Balance between switching losses and conduction losses

  • DC-DC solid state relays
  • Traction & motor drives
  • Hard switching applications

More Details

M2

View

650V, 900V

Lowest RDS(ON) for low speed applications

  • DC-DC solid state relays
  • Traction & motor drives

More Details

M3

View

1200V

Fast switching applications with 15V-18V gate drive

  • Hard switching applications
  • LLC resonant applications

More Details

Show More

1-25 of 25

Products per page

1

2

3

4

Jump to :

Evaluation/Development Kits

SECO-GDBB-GEVB

The gate driver plug-and-play ecosystem allows for the comparison of the dynamic performance and capabilities of different gate drivers and technologies, such as for example NCD57XXX, NCP51561 or NCP51530.

NCP-NCV51561TO2473LGEVB

The NCP5156x are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively.

NCP-NCV51563D2PAK7LGEVB

NCP-NCV51563D2PAK7LGEVB is an evaluation board for the NCP/NCV51563. It consists of NCP51563 and 2 SiC MOSFETs in the standard D2PAK-7L package.

SECO-HVDCDC1362-15W-GEVB

SECO-HVDCDC1362-15W-GEVB is highly efficient and primary-side regulated (PSR) auxiliary power supply targeting HEV and EV automotive power trains.

SECO-HVDCDC1362-40W-GEVB

SECO-HVDCDC1362-40W-GEVB is highly efficient and primary-side regulated (PSR) auxiliary power supply targeting HEV and EV automotive power trains.

SEC-3PH-11-OBC-EVB

The SEC-3PH-11-OBC-EVB is a three-phase On Board Charger (OBC) reference design platform achieving state-of-the-art system efficiency with AEC qualified SiC power devices and drivers.

Technical Documents

onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

This paper provides an overview on the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. As part of the full wide bandgap ecosystem that onsemi offers, this article also provides a guideline on the usage of an isolated gate driver for SiC MOSFETs.

Galvanic Isolation Gate Driver Design Tips

This application note describes some parameters, functions, and design tips of onsemi’s galvanic isolation gate drivers in system application.

Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

This paper describes how onsemi’s physically based, scalable SPICE models will take your simulation results to the next level, as a result, shorten your time to market.

SiC MOSFETs: Gate Drive Optimization

This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance and system level considerations will also be discussed.

Power Packages Heat Sink Mounting Guide

This document provides guidelines for mounting heat sinks for the proper thermal management. We describe heat-sink mounting methods, considerations, contact thermal resistance, and mounting torque for various packages.

A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

SiC MOSFETs have become a real alternative to using IGBTs in power applications. Isolated gate drivers are designed for the highest switching speeds and system size constrains required by technologies such as SiC by providing reliable control over IGBT and MOSFET. This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.

Videos