A truck charging at a ultra-fast EV charging station

Empowering DC Fast EV Chargers with EliteSiC

Discover recommended power electronics and robust components for DC fast EV charging. Comprehensive guide with practical development advice and product propositions, focusing on power electronics for DC fast EV chargers.

Overview

onsemi’s advanced silicon carbide (SiC) technology and packaging innovation drive higher power density in DC fast charging—enabling more power in existing designs, and smaller, more efficient systems for next-gen designs. With a comprehensive intelligent power portfolio supporting AC Level 1 and 2 through high‑power level 3 DC fast charging, onsemi addresses the growing needs of passenger EVs as well as commercial and agricultural fleets. More than 20 years of system expertise allow us to deliver integrated, scalable solutions that simplify design and accelerate deployment.

製品

Power Modules
Advanced power module products, including IGBT, MOSFET, SiC, Si/SiC Hybrid, Diode, SiC Diode, and Intelligent Power Modules (IPMs).
Silicon Carbide (SiC) MOSFETs

Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.

There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.

IGBTs
Insulated Gate Bipolar Transistors (IGBTs) that offer maximum reliability in high performance power conversion applications.
Silicon Carbide (SiC) Modules
NXH008P120M3F1PTG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
Silicon Carbide (SiC) Modules
NXH008T120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm, 1200V, M3S, TNPC Topology, F2 Package
Gate Drivers
NCP51563
5 kVRMS Isolated Dual Channel 4.5/9 A Gate Driver with High Channel-to-Channel Spacing
Gate Drivers
GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.
Protection
Offering products for current protection, voltage protection and EMI filters.

Documents

White Papers
Review of Power Rectifier and Converter Topologies for Extreme and Megawatt Charging Systems
White Papers
Lessons Learned: Developing a 25 kW DC Fast EV Charging Module
White Papers
Review of Power Converter Topologies for DC Fast Charging and Ultra-Fast Charging Applications
White Papers
DC EV急速充電:システムに使用される一般的なトポロジとパワーデバイス
Application Notes
Mounting Guideline for F1/F2 Full Plastic Case Modules with Press-fit Pins
White Papers
Enhancing Performance, Efficiency and Safety with SiC Isolated Gate Drivers
Reference Designs
Developing a 25 kW SiC-Based DC Fast Charger (DCFC) Part 3: PFC Simulation and Development
Application Notes
Mounting Instructions for PIM Modules (Q0, Q1, Q2, F1, F2)

Evaluation Boards/Kits

Evaluation Kit
SEC-25KW-SIC-PIM-GEVK
Evaluation Board
EVBUM2880G-EVB
Evaluation Board
EVBUM2883G-EVB
Evaluation Board
EVBUM2897G-EVB
Evaluation Kit
EVBUM2909G-EVK
Evaluation Board
NCP-NCV51152D2PAK7LGEVB
Evaluation Board
SECO-HVDCDC1362-40W-GEVB

Design Resources

Tools and resources for your evaluation process.

Find the Right Product

Utilize our PRT+ tool to identify the ideal product for you.

System Solution Guides

Explore tailored components and insights for your application.

Evaluation Boards & Kits

Buy and validate the performance of chosen components.

FAQs

Higher charging voltages reduce current for the same power level, which lowers conduction losses, minimizes heat generation, and enables thinner cables. This improves overall system efficiency, increases power density, and supports faster charging, especially for long-range passenger vehicles and heavy-duty commercial EVs.

Ultra-fast EV chargers can be designed with bi-directional power conversion topologies that allow energy to flow from the vehicle back to the grid. This enables vehicle-to-grid and vehicle-to-home applications, supporting grid stabilization, energy storage integration, and improved utilization of renewable energy sources.

High-power DC chargers use advanced topologies such as three-level active front ends, Vienna rectifiers, and dual active bridge DC–DC converters. For ultra-fast and megawatt systems, multi-level and resonant topologies are preferred to distribute losses, reduce component stress, and maximize efficiency.

DC wallboxes are compact, lower-power chargers typically used in residential or light commercial environments. They provide DC output without relying on an onboard charger, improving efficiency compared to AC charging, but they operate at much lower power levels than ultra-fast or megawatt DC charging stations.

System efficiency is critical because even small percentage losses translate into significant heat at high power levels. High efficiency reduces cooling requirements, improves reliability, and lowers operating costs, making it a key design target for ultra-fast and megawatt EV charging infrastructure.

Related Videos

Let's keep going – watch these videos for deeper dives and fresh perspectives.

Support and Community

If you're interested to learn about any onsemi technology, search for related articles in Help library.

サポート

オンセミは、お客様の利便性を考慮し、さまざまな方法によるお問い合わせに対応しています。

セールス

製品に関するご質問、またはデザインに関するサポートが必要ですか?

更新情報

新製品リリース、イベント、技術的洞察!

dc fast ev charging