Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

Active

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • Boost Inverter
  • PV Charging

  • Solar Inverter
  • Network Power Supply
  • Charging Stations

  • Max RDS(on) = 56mΩ at Vgs = 20V, Id = 35A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • 1200V Rated

Product Resources

Product services, tools and other useful resources related to NTH4L040N120SC1

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

検索

Close Search

製品:

1

共有

Product Groups:

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NTH4L040N120SC1

Loading...

Active

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

Y

M1

1200

58

40

106

137

175

$11.838

More Details

Show More

1-25 of 25

Products per page

Jump to :

Product Support

If you're interested to learn about this onsemi product, contact sales by filling out the form below.