Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • Boost Inverter
  • PV Charging
  • Solar Inverter
  • Network Power Supply
  • Charging Stations
  • Max RDS(on) = 56mΩ at Vgs = 20V, Id = 35A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • 1200V Rated

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NTH4L040N120SC1

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CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

Y

M1

1200

58

40

106

137

175

$11.838

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