Silicon Carbide (SiC) MOSFETs | NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter

  • UPS
  • Solar
  • Power Supply

  • High Junction Temperature
  • 100% UIL Tested
  • RoHS Compliant
  • High Speed Switching and Low Capacitance
  • 650V rated
  • Max RDS(on) = 18.7 mΩ at Vgs = 18V, Id = 60A

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NTH4L015N065SC1

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CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

M2

650

142

12

283

430

175

$16.03

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Die Related Summary Data

Device: NTH4L015N065SC1

Equivalent to wafer fab process: SIC

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FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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