NTH4L060N090SC1: Silicon Carbide MOSFET, N‐Channel, 900 V, 60 mΩ, TO247−4L

Datasheet: MOSFET - SiC Power, Single N-Channel
Rev. 0 (833kB)
製品概要
材料組成を表示
製品変更通知
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • High Junction Temperature
 
  • 175°C
  • 900V Rating
   
  • 100% UIL Tested
   
  • RoHS Compliant
   
アプリケーション   最終製品
  • DC-DC Converter
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  • Power Devices
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NTH4L060N090SC1 Active
Pb-free
Halide free
NTH4L060N090SC1 TO-247-4 340CJ NA Tube 450 $5.4602
マーケットリードタイム(週) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 2,250

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NTH4L060N090SC1  
 $5.4602 
Pb
H
 Active   
M2
900
67
60
61.8
107
175
TO-247-4
Case Outline
340CJ   
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