NTBG022N120M3S: SiC MOSFET 1200 V 22 mohm M3S Series in D2PAK-7L package

Datasheet: MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L
Rev. 0 (222kB)
製品概要
材料組成を表示
製品変更通知
The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. 
特長   利点
     
  • D2PAK-7L package for low common source inductance
 
  • Reduced EON losses
  • 15V to 18V Gate Drive
 
  • 18V for best performance; 15V for compatibility with IGBT driver circuits
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
 
  • Improved power density
  • 100% Avalanche Tested
 
  • Improved robustness to unexpected incoming voltage spikes or ringing
アプリケーション   最終製品
  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion
 
  • UPS
  • Electric Vehicle Chargers
  • Solar Inverters
  • Energy Storage Systems
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NTBG022N120M3S Active 
Pb-free
Halide free
NTBG022N120M3S D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $23.5594
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NTBG022N120M3S  
 $23.5594 
Pb
H
 Active   
M3S
1200
58
22
148
148
175
D2PAK7 (TO-263-7L HV)
Case Outline
過去に閲覧した製品
一覧をクリアする

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.