Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L

Favorite

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter
  • UPS
  • Solar
  • Power Supply
  • High Junction Temperature
  • 100% UIL Tested
  • RoHS Compliant
  • High Speed Switching and Low Capacitance
  • 650V rated
  • Max RDS(on) = 52.4 mΩ at Vgs = 18V, Id = 20A

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

検索

Close Search

製品:

1

共有

Product Groups:

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NTBG045N065SC1

Loading...

Active

CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

REEL

800

F

M2

650

62

31

105

168

175

$6.3358

More Details

Show More

1-25 of 25

Products per page

Jump to :