Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, Die

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilitycompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Consequently,system benefits include highest efficiency, faster operation frequency,increased power density, reduced EMI, and reduced system size.

  • Boost Inverter
  • PV Charging
  • Motor Drives
  • UPS
  • Charging Stations
  • 1200 V
  • High Speed Switching with Low Capacitance
  • 100% UIL Tested

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Package Type

MSL Type

MSL Temp (°C)

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Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

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NTC020N120SC1

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Pb

A

H

P

-

NA

0

N

M1

1200

60

20

170

266

175

Price N/A

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