Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter
  • UPS
  • Solar
  • Power Supply
  • Low RDSon
  • Ultra Low Gate Charge (Qg tot)
  • Low Output Capacitance (Coss)
  • 100% UIL Tested
  • RoHS Compliant

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状態

ECAD Models

Compliance

Package Type

MSL Type

MSL Temp (°C)

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Pricing ($/Unit)

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NTBG020N090SC1

Active

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

Y

M2

900

112

20

200

295

175

$22.699

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