NTBG020N090SC1: Silicon Carbide MOSFET, N‐Channel, 900V, 20 mΩ, D2PAK−7L

Datasheet: Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, D2PAK-7L
Rev. 3 (232kB)
製品概要
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • Low RDSon
 
  • 20mΩ
  • Ultra Low Gate Charge (Qg tot)
 
  • 200nC
  • Low Output Capacitance (Coss)
 
  • 295pF
  • 100% UIL Tested
   
  • RoHS Compliant
   
アプリケーション   最終製品
  • DC-DC Converter
  • Boost Inverter
 
  • UPS
  • Solar
  • Power Supply
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Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NTBG020N090SC1 Active
Pb-free
Halide free
NTBG020N090SC1, Silicon Carbide MOSFET, N?Channel, 900V, 20 m?, D2PAK?7L D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $18.3276
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NTBG020N090SC1  
 $18.3276 
Pb
H
 Active   
M2
900
112
20
200
295
175
D2PAK7 (TO-263-7L HV)
Case Outline
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