NTHL080N120SC1A: Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L

Datasheet: Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L
Rev. 3 (286kB)
製品概要
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製品変更通知
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • High Speed Switching and Low Capacitance
 
  • Coss = 80pF
  • 1200V rated
   
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
   
  • 100% UIL Tested
   
アプリケーション   最終製品
  • PFC
  • Boost Inverter
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  • Solar Inverter
  • Network Power Supply
  • Server Power Supply
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NTHL080N120SC1A Active
Pb-free
Halide free
NTHL080N120SC1A, Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L TO-247-3LD 340CX NA Tube 450 $7.5097
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NTHL080N120SC1A  
 $7.5097 
Pb
H
 Active   
M1
1200
31
80
56
80
175
TO-247-3LD
Case Outline
340CX   
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特集ビデオ
Designing Silicon Carbide (SiC) based DC Fast Charging System | Session 2: Dual Active Bridge DC-DC Design
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