Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter
  • UPS
  • Solar
  • Charging Station
  • Motor Drive
  • Low On Resistance
  • High Junction Temperature
  • Ultra Low Gate Charge
  • Low Effective Output Capacitance
  • This device is RoHS Compliant

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状態

ECAD Models

Compliance

Package Type

MSL Type

MSL Temp (°C)

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

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NTBG080N120SC1

Active

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

Y

M1

1200

30

80

56

79

175

$7.22

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