Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC/DC Converter
  • Boost Inverter
  • UPS
  • Solar
  • Charging Station
  • Motor Drive
  • AUX Power
  • Ultra Low Gate Charge
  • High Speed Switching and Low Capacitance
  • 1200V rated
  • 100% Avalanche Tested
  • Devices are RoHS Compliant

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MSL Temp (°C)

Container Type

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ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NTBG160N120SC1

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Active

CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

REEL

800

Y

M1

1200

19.5

160

33.8

50.7

175

$3.8765

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