Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L

Favorite

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC/DC Converter
  • Boost Inverter
  • UPS
  • Solar
  • Charging Station
  • Motor Drive
  • AUX Power
  • Ultra Low Gate Charge
  • High Speed Switching and Low Capacitance
  • 1200V rated
  • 100% Avalanche Tested
  • Devices are RoHS Compliant

検索

Close Search

製品:

1

Expand Table

Collapse Table

Share

Export

Compare

Columns

0

Product Groups:

Orderable Parts:

1

製品

状態

ECAD Models

Compliance

Package Type

MSL Type

MSL Temp (°C)

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Pricing ($/Unit)

Loading...

NTBG160N120SC1

Active

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

Y

M1

1200

19.5

160

33.8

50.7

175

$4.5102

More Details

Show More

1-25 of 25

Products per page

Jump to :