Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L

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Overview

The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.

  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion
  • Solar Inverter
  • UPS
  • Solid State Transformer
  • Medium Voltage Grid Equipment
  • Energy Storage Systems
  • Hydrogen Electrolyzer
  • Fuel Cells
  • D2PAK-7L package for low common source inductance
  • 18V to 20V Gate Drive
  • New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

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MSL Type

MSL Temp (°C)

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

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NTBG028N170M1

Active

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

F

M1

1700

81

28

200

200

175

$30.2104

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