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SiC devices possess higher dielectric breakdown strength, energy bandgap, and thermal conductivity than silicon, allowing for the creation of more efficient and compact power converters. This paper discusses how onsemi’s M3S technology can switch faster and operate at higher frequencies than Silicon (Si) MOSFETs or IGBTs, resulting in space−saving, reduced heat dissipation, higher efficiencies, and lighter power converters.White Paper
Learn about onsemi’s latest M3S series to enhance switching performance for on board charger.Application Note
onsemi initiates a line of EliteSiC MOSFET modules to enable OBC design improvements, including a PFC and DC-DC modules using 1200 V SiC devices. In this application note, these modules are introduced, and guidance is provided for employing this new line of modules.Learn More
onsemi’s new Elite Power Simulator provides an accurate representation of how their circuit will work using our EliteSiC family of products including manufacturing corner cases of the EliteSiC technology.