IGBTs | AFGY160T65SPD-B4

IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning

Active

Datasheet

製品

Similar Products

Overview

AFGY160T65SPD-B4 is a 650 V 160 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

  • EV traction inverter

  • Electrical Vehicles

  • AEC-Q101 Qualified and PPAP Capable
  • Vcesat and Vth binning
  • Positive Temperature Co-Efficient
  • 100% of the Parts are Dynamically Tested
  • Short circuit ruggedness > 6us @ 25°C
  • This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
  • Copacked with Soft, Fast Recovery Extremefast Diode

Tools and Resources

Product services, tools and other useful resources related to AFGY160T65SPD-B4

CAD Model

CAD Model

材料組成

製品変更通知

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

検索

Close Search

製品:

1

共有

並べ替え

Product Groups:

┗

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

AFGY160T65SPD-B4

Loading...

Active

CAD Model

Pb

A

H

P

TO-247-3

340CU

NA

0

TUBE

30

Y

-

650

240

1.6

1.4

5.7

12.4

132

~NA~

163

6

~NA~

882

Yes

$7.7908

More Details

Show More

1-25 of 25

Products per page

Jump to :

1

Support on the go

Find and compare products, get support and connect with onsemi sales team.