IGBTs | HGT1S12N60A4DS

600V、SMPS IGBT

Obsolete

Datasheet

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Overview

HGT1S12N60A4DS は、MOSFET の高入力インピーダンスとバイポーラ・トランジスタのオンステートでの低伝導損失の長所を組み合わせています。この IGBT は、高周波で動作するため低伝導損失が不可欠な高電圧スイッチング・アプリケーションの多くに最適です。このデバイスは UPS や溶接のような高速スイッチング・アプリケーション向けに最適化されています。

  • その他の産業用
  • 無停電電源装置

  • 23A、600V @ TC = 110℃
  • 低飽和電圧: V CE(sat) = 2.0 V @ I C = 12A
  • 通常立ち下がり時間............70ns @ TJ = 125℃
  • 低導電損失

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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Irr Typ (A)

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HGT1S12N60A4DS

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Obsolete

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Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

TUBE

800

N

-

600

23

2

-

-

-

18

-

-

-

-

-

Yes

Price N/A

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Die Related Summary Data

Device: HGT1S12N60A4DS

Equivalent to wafer fab process: 2F,3B

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等価デバイス時間

MTBF/MTTF (時間)

FITS

2F,3B

0

552010123

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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