IGBTs | HGTG20N60B3

600V、PT IGBT

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Overview

HGTG20N60B3 は、MOSFET とバイポーラ・トランジスタの長所を組み合わせた第 3 世代 MOS ゲート高電圧スイッチです。MOSFET の高入力インピーダンス、そしてバイポーラ・トランジスタのオンステートでの低伝導損失を備えています。オンステートでの電圧降下はさらに低減され、25°C ～ 150°C でなら、そのばらつきはほんのわずかです。IGBT は、AC および DC モータ制御、電源、ソレノイド用ドライバ、リレー、接触器など、低伝導損失が不可欠な中程度の周波数で動作する多くの高電圧スイッチング・アプリケーションに最適です。

  • その他の産業用
  • 40A、 600V @ TC = 25°C
  • 600V スイッチングSOA能力
  • 通常の立ち下がり時間: 140ns @ 150°C
  • 短絡回路定格:
  • 低導電損失

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Irr Typ (A)

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HGTG20N60B3

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

20

1.8

-

-

-

-

-

-

-

-

-

No

Price N/A

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