IGBTs | HGTG30N60A4

IGBT、600V、SMPS

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Overview

HGTG30N60A4 は、MOSFET の高入力インピーダンスとバイポーラ・トランジスタのオンステートでの低伝導損失の長所を組み合わせています。この IGBT は、高周波で動作するため低伝導損失が不可欠な高電圧スイッチングアプリケーションの多くに最適です。このデバイスは UPS や溶接のような高速スイッチングアプリケーション向けに最適化されています。

  • その他の産業用

  • 60A
  • 600V @ TC = 110°C
  • 低飽和電圧: V CE(sat) = 1.8 V @ I C = 30A
  • 通常の立ち下がり時間。 . . . . . . . . . TJで 58ns = 125 ℃

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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HGTG30N60A4

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

60

1.8

-

0.24

0.28

-

-

225

-

-

463

No

Price N/A

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信頼性データ

Die Related Summary Data

Device: HGTG30N60A4

Equivalent to wafer fab process: IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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