IGBTs | HGTG30N60B3

IGBT、600V、PT

Obsolete

Datasheet

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Overview

HGTG30N60B3 は、MOSFET の高入力インピーダンスとバイポーラ・トランジスタのオンステートでの低伝導損失の長所を組み合わせています。IGBT は、UPS、ソーラ・インバータや電源など、低伝導損失が不可欠な中程度の周波数で動作する多くの高電圧スイッチング・アプリケーションに最適です。

  • 発電と配電
  • 30A、600V、TC= 110°C
  • 低飽和電圧: VCE(sat) = 1.45V @ IC = 30A
  • 通常の立ち下がり時間。 . . . . . . . TJで 90ns = 150 ° C
  • 短絡回路定格:
  • 低導電損失

Tools and Resources

Product services, tools and other useful resources related to HGTG30N60B3

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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HGTG30N60B3

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

No

-

600

30

1.45

-

0.68

0.5

-

-

170

-

100

208

No

Price N/A

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信頼性データ

Die Related Summary Data

Device: HGTG30N60B3

Equivalent to wafer fab process: IGBT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

3

4562573939

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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