IGBTs | HGTG7N60A4D

600V、SMPS IGBT

Obsolete

Datasheet

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Overview

HGTP7N60A4Dは、MOSFETの高入力インピーダンスとバイポーラトランジスターの低いオン状態導電損失という、最高の機能を組み合わせています。 このIGBTは、低い導電損失が重要である、高い周波数で動作する、多くの高電圧スイッチング用途に適しています。 このデバイスはUPSおよび溶接機などの高速スイッチング用途に適しています。

  • その他の産業用
  • 無停電電源装置

  • 14A、600V @ TC = 110℃
  • 低飽和電圧: V CE(sat) = 1.9 V @ I C = 7A
  • 通常の立ち下がり時間。 . . . . . . . . . TJで 75ns = 125 ℃
  • 低導電損失

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Case Outline

MSL Type

MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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HGTG7N60A4D

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Obsolete

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

14

1.9

-

-

-

-

-

-

-

-

-

Yes

Price N/A

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信頼性データ

Die Related Summary Data

Device: HGTG7N60A4D

Equivalent to wafer fab process: 2F,3B

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製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

2F,3B

0

552010123

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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