Small Signal MOSFETs | FDG312P

Pチャネル PowerTrench® MOSFET、2.5V仕様、-1.2A、180mΩ

Obsolete

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Overview

このPチャネルMOSFETは、優れたスイッチング性能のために低デート電荷を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度なPowerTrenchプロセスを使用して製造されます。これらのデバイスは、ポータブルエレクトロニクスアプリケーションに最適です。

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  • -1.2 A、-20 V。RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V。
  • RDS(on) = 0.18 Ω @ VGS = -4.5 V
  • RDS(on) = 0.25 Ω @ VGS = -2.5 V
  • 少量のゲート電荷(3.3 nC通常)。
  • 超低RDS(ON)用高性能トレンチ技術。
  • コンパクトな業界標準SC70-6表面搭載型パッケージ

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG312P

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Obsolete

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

No

P-Channel

PowerTrench® T1

SC-88-6

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-1.2

0.75

NA

250

2.1

3.3

NA

-

-

-

-

Price N/A

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Die Related Summary Data

Device: FDG312P

Equivalent to wafer fab process: TR

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TR

1

3586390609

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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