Small Signal MOSFETs | FDT86106LZ

NチャネルPowerTrench® MOSFET 100V、3.2A、108mΩ

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Overview

このNチャネルLogic Level MOSFETは、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度なPower Trench®プロセスを使用して製造されます。ESD電圧レベルを高めるためにG-Sツェナーを追加しています。

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  • DC-DC Conversion

  • 最大 rDS(on) = 108 mΩ @ VGS = 10 V、ID = 3.2 A
  • 最大 rDS(on) = 153 mΩ @ VGS = 4.5 V、ID = 2.7 A
  • 超低rDS(on)用の高性能トレンチ技術
  • 広く使われている表面実装パッケージ中の高電力および電流の処理機能
  • HBM ESD保護レベル> 3 KV 通常 (注 4)
  • 100%のUILがテスト済み
  • RoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDT86106LZ

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

Y

N-Channel

PowerTrench® T1

SC-4

Small Signal

Logic

0

Single

0

100

108

±20

2.2

3.2

2.2

-

153

-

2.4

234

0.9

21

46

3.1

$0.4692

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Die Related Summary Data

Device: FDT86106LZ

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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