Gallium Nitride (GaN) Integrated Power | NCP58935ABT

Enhancement Mode Gallium Nitride (GaN) Power Switch with Integrated Gate Clamp and Protection - GaNEXUS Smart, 650V, 19 mOhm

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Integrates a 650V enhancement-mode GaN power transistor with gate-drive and protection functions in a single package. An internal gate clamp, supported by LDO-based circuitry, regulates the gate drive voltage over a 10 - 24V input range to protect the GaN transistor from excessive gate stress while maintaining excellent switching performance. Intended for compact, high-frequency, and high-power conversion applications.

  • Totem Pole PFC and LLC
  • High-Voltage Synchronous Buck/Boost Converters
  • Cloud-Server
  • 5G Telecom
  • High Performance Computing and Industrial
  • High Switching Frequency
  • Dedicated Turn-on dV/dT Control Feature
  • Ultra-low Circuit and Package Parasitic Elements
  • Integrated Gate Clamp

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ENGNCP58935ABTTXG

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Pb

A

H

P

PDSO-G16 9.90x10.15x2.30, 1.20P

208AA

3

260

REEL

1200

No

650

19

25

161

75

~NA~

Gate Voltage Clamp Protection

Integrated Miller Clamp

$10.6664

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