IGBTs | NGTB30N120L2

IGBT、1200V 30A FS2 低 VCEsat

Obsolete

Datasheet

購入

Overview

この絶縁ゲート・バイポーラ・トランジスタ (IGBT) は、堅牢で費用効率が高いフィールド・ストップ II トレンチ構造が特長であり、要求の厳しいスイッチング・アプリケーションで優れた性能を発揮し、低オン抵抗電圧も最小スイッチング損失も実現します。この IGBT は、モータ・ドライバ・アプリケーションに最適です。低フォワード電圧のソフトで高速な共パッケージ型還流ダイオードが内蔵されています。

  • Motor Drive Inverter
  • Industrial Switching
  • Welding

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • 10 µs Short Circuit Capability

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB30N120L2WG

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

-

1200

30

1.7

1.5

1.4

4.4

450

32

310

10

-

534

Yes

Price N/A

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信頼性データ

Die Related Summary Data

Device: NGTB30N120L2WG

Equivalent to wafer fab process: IGN IGBT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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