IGBT、PFC、高周波数、30 A、600 V

Favorite

Overview

この絶縁ゲート・バイポーラ・トランジスタ (IGBT) は堅牢で費用効率が高いトレンチ構造が特長であり、要求の厳しいスイッチング・アプリケーションで優れた性能を発揮し、低オン抵抗電圧も最小スイッチング損失も実現します。

  • Low Saturation Voltage using Trench with Field Stop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for High Speed Switching
  • 5µs Short Circuit Capability

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

検索

Close Search

製品:

1

共有

Product Groups:

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTG30N60FLWG

Loading...

Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

-

600

30

1.65

-

0.28

0.7

-

-

170

5

-

167

No

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :