Small Signal MOSFETs | FDD3510H

デュアル N & P チャネル PowerTrench® MOSFET、80V

Obsolete

Datasheet

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Overview

これらのデュアル N&P チャネル・エンハンスメントモード MOSFET は、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度な PowerTrench® プロセスを使用して製造されています。

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  • N-Channel: 80V, 13.9A, 80mΩ
  • P-Channel: -80V, -9.4A, 190mΩ
  • Q1: Nチャンネル:
  • 最大rDS(on) = 88mΩ @VGS = 6V、 ID = 4.1AQ2: Pチャンネル
  • UIL 100%テスト済み
  • RoHS対応

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD3510H

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Find Replacements

Obsolete

CAD Model

Pb

A

H

P

DPAK-5

369AL

1

260

REEL

2500

No

Complementary

PowerTrench® T1

DPAK-5

Small Signal

Standard

0

Dual

0

±80

N:80,P:190

±20

Q1: 4, Q2:-3

N:13.9, P: -9.4

Q1: 35, Q2: 32

-

-

-

14

N: 600, P: 660

N: 3.2 P:2.9

N: 28 P: 30

N: 56 P: 50

N: 27 P: 25

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDD3510H

Equivalent to wafer fab process: TR

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TR

1

3586390609

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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