Small Signal MOSFETs | FDMD8530

デュアルNチャネル PowerTrench® MOSFET 30V、201A、1.25mΩ

Obsolete

Datasheet

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Overview

このデバイスには、デュアルPower (5 mm X 6 mm MLP）パッケージに2つの30V NチャネルMOSFETが含まれています。HSソースとLSドレインは、ハーフ/フルブリッジ、低ソースインダクタンスパッケージ、低rDS(on)/Qg FOMシリコン用に内部接続しています。

  • This product is general usage and suitable for many different applications.

  • Q1: N チャネル
  • 最大 rDS (on) = 1.5 mΩ @ VGS = 4.5 V、ID = 32 A
    Q2: N チャネル
  • ブリッジ トポロジーの一次側の柔軟なレイアウトに最適
  • 100% UILテスト済み
  • ケルビンハイサイドMOSFET駆動ピン配置性能
  • RoHS 対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD8530

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Obsolete

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Pb

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PowerTrench® T1

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Logic

0

Dual

0

30

Q1=Q2=1.25

20

3

Q1=Q2= 201

78

-

Q1=Q2=1.5

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7425

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Price N/A

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信頼性データ

Die Related Summary Data

Device: FDMD8530

Equivalent to wafer fab process: RN

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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