Small Signal MOSFETs | FDS6681Z

30V Pチャネル PowerTrench® MOSFET -20V、4.6mΩ

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Overview

このPチャネルMOSFETは、オン抵抗を最小限に抑えるように特別に構成された高度なPowerTrench®プロセスを使用して製造されています。このデバイスは、ノートPCやポータブルバッテリーパックで一般的な電源管理およびロードスイッチアプリケーションに最適です。

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  • • -20 A, -30V。
  • RDS(ON) = 4.6 mΩ @ VGS = -10V
  • RDS(ON) = 6.5 mΩ @ VGS = -4.5V• バッテリ用の拡張VGSS範囲 (-25V)• HBM ESD保護レベル 8kV 通常(注 3)• 超低rDS(ON)用の高性能トレンチ技術• 高い電力および電流処理能力• 端子は鉛フリーでRoHS対応です。
  • Extended VGSS range (–25V) for battery applications
  • HBM ESD protection level of 8kV typical (note 3)
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
  • Termination is Lead-free and RoHS Compliant

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Package Type

Case Outline

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MSL Temp (°C)

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ON Target

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Package Name

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Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

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FDS6681Z

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

No

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-30

4.6

25

-3

-20

2.5

-

6.5

12

105

7540

-

-

-

-

$0.9418

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Die Related Summary Data

Device: FDS6681Z

Equivalent to wafer fab process: TV

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製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TV

0

1587326882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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