Small Signal MOSFETs | FDS86140

N チャネル PowerTrench® MOSFET 100V、11.2A、9.8mΩ

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Overview

この N チャネル MOSFET は、rDS(on)、スイッチング性能、堅牢性のために最適化された高度な PowerTrench® プロセスを使用して製造されています。

  • ディストリビューション
  • DC/DC Converters
  • Off-line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24V and 48V Systems
  • High Voltage Synchronous Rectifier
  • 最大 rDS(on) = 9.8 mΩ@ VGS = 10 V、ID = 11.2 A
  • 最大 rDS(on) = 16 mΩ @ VGS = 6 V、ID = 9 A
  • 非常に小さなrDS(on)を可能にする高性能トレンチ技術
  • 広く使われている表面実装パッケージ内での大電力と電流の処理能力
  • 100%のUILがテスト済み
  • RoHS対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS86140

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

No

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

100

9.8

±20

4

11.2

5

-

-

-

16.5

1940

6.5

59

440

20

$1.2676

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Die Related Summary Data

Device: FDS86140

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

6716497626

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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