FFSP3065B-F085: Automotive Silicon Carbide (SiC) Schottky Diode, 650 V

Datasheet: Silicon Carbide Schottky Diode 650 V, 30 A
Rev. 4 (211kB)
製品概要
材料組成を表示
製品変更通知
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
特長   利点
     
  • Max Junction Temperature 175C
 
  • Tj = 175°C
  • Avalanche Rated 144 mJ
   
  • High Surge Current Capacity
   
  • Positive Temperature Coefficient
   
  • Ease of Paralleling
   
  • No Reverse Recovery / No Forward Recovery
   
  • AEC-Q101 Qualified and PPAP capable
   
アプリケーション   最終製品
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
 
  • Automotive HEV-EV Onboard Chargers
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
FFSP3065B-F085 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
FFSP3065B-F085 TO-220-2 340BB NA Tube 800 $3.36
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSP3065B-F085  
 $3.36 
Pb
A
H
P
 Active   
Automotive
Single
650
30
1.7
120
160
TO-220-2
Case Outline
340BB   
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特集ビデオ
Overview of Wide Bandgap and Silicon Carbide (SiC) Capabilities
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