Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

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Overview

EliteSiC family of Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • Max Junction Temperature 175 °C
  • Avalanche Rated 506 mJ
  • High Surge Current Capacity
  • Low IR @ TJ:175 °C
  • Positive Temperature Coefficie
  • No Reverse Recovery / No Forward Recovery
  • Low Vf @ TJ:175 °C

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NDSH25170A

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Pb

A

H

P

TO-247-2LD

NA

0

TUBE

450

Y

D1

Single

1700

35

1.75

220

40

$8.7859

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