NVDSH20120C: Silicon Carbide Schottky Diode, 1200V, 20A, TO-247-2LD

Datasheet: Silicon Carbide Schottky Diode
Rev. 1 (228kB)
製品概要
材料組成を表示
製品変更通知
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
特長   利点
     
  • Max Junction Temperature
 
  • Tj = 175 °C
  • Avalanche Rated
 
  • 166 mJ
  • High Surge Current Capacity
   
  • Positive Temperature Coefficient
   
  • Ease of Paralleling
   
  • No Reverse Recovery / No Forward Recovery
   
  • AEC-Q101 qualified and PPAP Capable
   
アプリケーション   最終製品
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
 
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NVDSH20120C Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVDSH20120C TO-247-2LD NA Tube 450 $9.9998
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
NVDSH20120C  
 $9.9998 
Pb
A
H
P
 Active   
D3
Single
1200
20
1.75
119
200
TO-247-2LD
Case Outline
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特集ビデオ
Advantages of New Gen2 1200V SiC Diodes for Automotive and Industrial Applications
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