NVBG022N120M3S: SiC MOSFET 1200 V 22 mohm M3S Series in D2PAK-7L package

Datasheet: MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L
Rev. 0 (226kB)
製品概要
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The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. 
特長   利点
     
  • D2PAK-7L package for low common source inductance
 
  • Reduced EON losses
  • 15V to 18V Gate Drive
 
  • 18V for best performance; 15V for compatibility with IGBT driver circuits
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
 
  • Improved power density
  • 100% Avalanche Tested
 
  • Improved robustness to unexpected incoming voltage spikes or ringing
アプリケーション   最終製品
  • DC/DC converters for EV/HEV
  • On Board Charger (OBC)
 
  • Automotive EV/HEV
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製品
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内容
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MSL
梱包形態
予算 価格/Unit
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Case Outline
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NVBG022N120M3S Active 
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVBG022N120M3S D2PAK7 (TO-263-7L HV) 1 260 Tape and Reel 800 $14.7996
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NVBG022N120M3S  
 $14.7996 
Pb
A
H
P
 Active   
M3S
1200
58
22
148
148
175
D2PAK7 (TO-263-7L HV)
Case Outline
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