Si/SiC Hybrid Modules | NXH100B120H3Q0

Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.

Active

Datasheet

製品

Similar Products

Overview

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • MPPT Boost Stage
  • Battery Charger Boost Stage

  • Solar Inverters
  • Energy Storage Systems

  • IGBT Specifications: VCE(sat) = 1.77 V, ESW = 2200 uJ
  • 25 A / 1600 V Bypass and Anti−parallel Diodes
  • SiC Rectifier Specification: VF = 1.44 V
  • Solder pin and press-fit pin options available

Tools and Resources

Product services, tools and other useful resources related to NXH100B120H3Q0

CAD Model

CAD Model

材料組成

製品変更通知

信頼性

Product List

Need a Gate Driver?

If you wish to buy products or product samples, please log in to your onsemi account.

検索

Close Search

製品:

4

共有

並べ替え

Product Groups:

┗

Orderable Parts:

4

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Configuration

VBR Max (V)

Rated Current (A)

VCE(sat) Typ (V)

VF Typ (V)

Reference Price

NXH100B120H3Q0PG

Loading...

Active

CAD Model

Pb

A

H

P

Q0

180BF

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$47.1372

More Details

NXH100B120H3Q0PTG

Loading...

Active

CAD Model

Pb

A

H

P

Q0

180BF

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$43.5889

More Details

NXH100B120H3Q0SG

Loading...

Active

CAD Model

Pb

A

H

P

Q0

180AJ

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$43.5889

More Details

NXH100B120H3Q0STG

Loading...

Active

CAD Model

Pb

A

H

P

Q0

180AJ

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$43.5889

More Details

Show More

1-25 of 25

Products per page

Jump to :

1

Support on the go

Find and compare products, get support and connect with onsemi sales team.

信頼性データ

Die Related Summary Data

Device: NXH100B120H3Q0PTG

Equivalent to wafer fab process: SIC

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SIC

0

3855921070

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

新しい検索