Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.

Favorite

Overview

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • MPPT Boost Stage
  • Battery Charger Boost Stage
  • Solar Inverters
  • Energy Storage Systems
  • IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
  • 25 A / 1600 V Bypass and Anti−parallel Diodes
  • SiC Rectifier Specification: VF = 1.44 V
  • Solder pin and press-fit pin options available

検索

Close Search

製品:

4

Expand Table

Collapse Table

Share

Export

Compare

Columns

0

Product Groups:

Orderable Parts:

4

製品

状態

ECAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Configuration

VBR Max (V)

Rated Current (A)

VCE(sat) Typ (V)

VF Typ (V)

Pricing ($/Unit)

Loading...

NXH100B120H3Q0PG

Active

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$41.4061

More Details

NXH100B120H3Q0STG

Active

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$52.0297

More Details

NXH100B120H3Q0PTG

Active

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$52.0297

More Details

NXH100B120H3Q0SG

Active

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$40.0228

More Details

Show More

1-25 of 25

Products per page

Jump to :