Silicon Carbide (SiC) Diodes | FFSM0465A

SiC ダイオード - 650V、4A、PQFN88

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炭化ケイ素 (SiC) ショットキー・ダイオードは、 シリコンに比べて優れたスイッチング性能と高い信頼性を実現する新しい技術を採用しています。逆回復電流がなく、温度から独立したスイッチング特性で、 優れた熱性能の炭化ケイ素は、次世代のパワー・セミコンダクターとなります。システムの利点として、最高の効率、高速動作周波数、電力密度の増加、EMI の削減、システムのサイズの縮小とコストの削減があります。Llew

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • UPS / ESS
  • Solar inverter

  • Max Junction Temperature 175 °C
  • Leadless Ultra-thin SMD package
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
  • Pb−Free, Halogen Free/BFR Free and RoHS Compliant

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VRRM (V)

IF(ave) (A)

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FFSM0465A

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CAD Model

Pb

A

H

P

PQFN-4

483AP

1

260

REEL

3000

Y

D1

Single

650

4

1.75

21

200

$1.2398

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信頼性データ

Die Related Summary Data

Device: FFSM0465A

Equivalent to wafer fab process: SIC

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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