Silicon Carbide (SiC) Diodes | NDSH20120C-F155

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L

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Overview

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • Max Junction Temperature 175 °C
  • Avalanche Rated 166 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
  • Low Vf @ TJ:175 °C

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NDSH20120C-F155

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Pb

A

H

P

TO−247−2LD

340DC

NA

0

TUBE

450

F

D3

Single

1200

20

1.75

119

200

$4.4914

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