NVHL080N120SC1A: Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L

Datasheet: MOSFET - Power, N-Channel, Silicon Carbide, TO-247-3L
Rev. 1 (291kB)
製品概要
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製品変更通知
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • High Speed Switching and Low Capacitance
 
  • Coss = 80pF
  • 1200V rated
   
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
   
  • 100% UIL Tested
   
  • Qualified for Automotive According to AEC−Q101
   
アプリケーション   最終製品
  • PFC
  • LLC
 
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NVHL080N120SC1A Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL080N120SC1A, Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L TO-247-3LD 340CX 1 260 Tube 450 $6.2267
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NVHL080N120SC1A  
 $6.2267 
Pb
A
H
P
 Active   
M1
1200
31
80
56
80
175
TO-247-3LD
Case Outline
340CX   
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特集ビデオ
Utilizing Wide Bandgap in HEV/EV Charging Applications
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