Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices
Modern day power electronics encompasses a wide spectrum of semiconductor device types, all of which present unique benefits and trade-offs in the design spectrum. Such devices include IGBTs, Super Junction MOSFETs, Trench MOSFETs, GaN HEMTs, SiC MOSFETs and SiC diodes. In order to realize all the individual device benefits and trade-offs, efficient power electronic design hinges on the availability of accurate and predictive SPICE models. This paper proposes novel physical and scalable SPICE models for power electronic semiconductors including wide bandgap devices. The models are based on process and layout parameters, enabling design optimization through a direct link between SPICE, physical design, and process technology. The models are used as a key design component during technology development and for the proliferation of new products.
EMEA Power Solution Group Technical Marketing Engineer, ON Semiconductor
Didier received his Electronics Engineer diploma in the "École Nationale Supérieure d’Électronique et de RadioÉlectricité de Bordeaux", France in 1992 and his Ph. D. degree in Power Electronics form the University of Bordeaux in 1997.
In 1996, he joined AEG Power Solutions, formerly Alcatel Converters, as a research engineer for dc-dc and ac-dc converters design in a range of 1W to 1kW mainly for telecom equipment. He managed the research activities from 2000 to 2014. He published more than 10 papers on power electronics. From 2011 to 2013, he worked 18 months on a 15 kW solar inverter module for a 150 kW cabinet in Dallas, Texas, USA.
His main interests during that period were switching mode power supply, converter stability and modeling, high power factor rectifiers.
He joined Fairchild Semiconductor in August 2014 as a Field Application Engineer supporting South of France, Spain and Portugal. He is currently an EMEA Power Solution Group Technical Marketing Engineer.
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