Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

Overview

The NXH006P120M3F2PTHG is a power module containing 6 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.

  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion

  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters

  • Excellent FOM [ = Rdson * Eoss ]
  • 15V to 18V Gate Drive
  • 6 mohm / 1200 V M3S SiC MOSFET Half−Bridge
  • These Devices are Pb−Free, Halide Free and are RoHS Compliant

Tools and Resources

Product services, tools and other useful resources related to NXH006P120M3F2PTHG

Buy/Parametrics Table

検索

Close Search

製品:

1

共有

Product Groups:

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Configuration

VBR Max (V)

RDS(on) Typ (mΩ)

Application

Reference Price

NXH006P120M3F2PTHG

Loading...

Active

CAD Model

Pb

A

H

P

PIM36 56.70x42.50x12.00

NA

0

BTRAY

20

F

Half-Bridge

1200

6

EV Charging, Energy Infrastructure

$139.1544

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.