Silicon Carbide (SiC) Modules | NXH006P120M3F2PTHG

Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

Active

Similar Products

Datasheet

購入

Overview

The NXH006P120M3F2PTHG is a power module containing 6 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.

  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion

  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters

  • Excellent FOM [ = Rdson * Eoss ]
  • 15V to 18V Gate Drive
  • 6 mohm / 1200 V M3S SiC MOSFET Half−Bridge
  • These Devices are Pb−Free, Halide Free and are RoHS Compliant

Tools and Resources

Product services, tools and other useful resources related to NXH006P120M3F2PTHG

CAD Model

CAD Model

材料組成

製品変更通知

Elite Power Simulator

PLECS Model Generator

Buy/Parametrics Table

検索

Close Search

製品:

1

共有

並べ替え

Product Groups:

┗

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Configuration

VBR Max (V)

RDS(on) Typ (mΩ)

Application

Reference Price

NXH006P120M3F2PTHG

Loading...

Active

CAD Model

Pb

A

H

P

PIM36 56.70x42.50x12.00

180BY

NA

0

BTRAY

20

F

Half-Bridge

1200

6

EV Charging, Energy Infrastructure

$139.1544

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.