Silicon Carbide (SiC) Modules | NXH40B120MNQ1

Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

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The NXH40B120MNQ1 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of three 40mohm/1200V SiC MOSFETs and three 40A/1200V SiC diodes. Three additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • Solar Inverter Boost Stage

  • Solar Inverter
  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations

  • SiC MOSFET Specification: 40 mΩ 1200 V
  • 50 A / 1200 V Bypass Diodes
  • SiC Rectifier Specification: VF = 1.4 V
  • Solderable pins
  • Thermistor

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NXH40B120MNQ1SNG

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Pb

A

H

P

Q1

180BQ

NA

0

BTRAY

21

Y

Three Channel Boost

1200

40

Solar Inverter, Energy Infrastructure

$81.5478

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Die Related Summary Data

Device: NXH40B120MNQ1SNG

Equivalent to wafer fab process: SIC

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SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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