Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

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Overview

The NXH40B120MNQ1 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of three 40mohm/1200V SiC MOSFETs and three 40A/1200V SiC diodes. Three additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • Solar Inverter Boost Stage
  • Solar Inverter
  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • SiC MOSFET Specification: 40 mΩ 1200 V
  • 50 A / 1200 V Bypass Diodes
  • SiC Rectifier Specification: VF = 1.4 V
  • Solderable pins
  • Thermistor

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NXH40B120MNQ1SNG

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Pb

A

H

P

Q1

NA

0

BTRAY

21

N

Three Channel Boost

1200

40

Solar Inverter, Energy Infrastructure

$131.722

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