シリコンカーバイド (SiC) MOSFET | NTH4LN032N065M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L, Thin Lead

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The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. It also features 0V switch off. 

  • Industrial
  • AI Data Center
  • UPS / ESS
  • Solar Inverter
  • EV Charger
  • SMPS
  • Energy Storage System
  • TO-247-4L Package with Kelvin source configuration and thin lead
  • Excellent FOM [ = Rdson * Eoss ]
  • Ultra Low Gate Charge (QG(tot) = 55 nC)
  • High Speed Switching with Low Capacitance (Coss = 114 pF)
  • 15V to 18V Gate Drive
  • New M3S technology: 32 mohm RDS(ON) with low Eon and Eoff losses
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant

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NTH4LN032N065M3S

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Pb

A

H

P

TO-247 4-LEAD, THIN LEADS

340CW

NA

0

TUBE

450

No

SiC MOSFET

650

50

32

55

114

175

Price N/A

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