SiC MOSFETs, critical design requirements and optimized Gate-Driving
This presentation show detail characteristics of SiC MOSFETs that make them well suited for high-voltage, high-speed, power applications. Critical design requirements related to optimal gate drive design for maximizing SiC switching performance will be described. The task of designing an adequate gate drive circuit is simplified by a high performance, SiC gate driver IC which will be introduced.
Principal Applications Engineer, ON Semiconductor
Steve is a Member of the Technical Staff working as a Principal Applications Engineer in ON Semiconductor’s Analog Solutions Group (ASG) located in Bedford, NH, USA.
In his current role, he is responsible for technology development related to power-supply controllers and MOSFET gate drive ICs. He has more than 25 years of power supply design experience, including 10 years designing military and commercial power systems for commercial and military avionic applications. He has spent the last sixteen years working within the field of power management semiconductors, specializing in Systems and Applications Engineering.
His areas of interest include high-power converter topologies, soft-switching converters, synchronous rectification, high-frequency power conversion and magnetic component design, advanced power supply control techniques, WBG devices and power factor correction.
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