オンセミ、業界をリードする効率を提供するSiCファミリの新名称「EliteSiC」を発表

New 1700 V EliteSiC devices provide reliable, high-efficiency operation in energy infrastructure and industrial drive applications

LAS VEGAS – Jan. 3, 2023 – onsemi (Nasdaq: ON), a leader in intelligent power and sensing technologies, today introduced “EliteSiC” as the name of its silicon carbide (SiC) family. This week, the company will showcase three new members of the family – the 1700 V EliteSiC MOSFET and two 1700 V avalanche-rated EliteSiC Schottky diodes – at the Consumer Electronics Show (CES) in Las Vegas. The new devices provide reliable, high-efficiency performance for energy infrastructure and industrial drive applications and highlight onsemi’s position as a leader in industrial silicon carbide solutions.

With the 1700 V EliteSiC MOSFET (NTH4L028N170M1), onsemi delivers higher breakdown voltage (BV) SiC solutions, required for high-power industrial applications. The two 1700 V avalanche-rated EliteSiC Schottky diodes (NDSH25170A , NDSH10170A) allow designers to achieve stable high-voltage operation at elevated temperatures while offering high efficiency enabled by SiC.

“By providing best-in-class efficiency with reduced power losses, the new 1700 V EliteSiC devices reinforce the high standards of superior performance and quality for products in our EliteSiC family as well as further expand the depth and breadth of onsemi’s EliteSiC,” said Simon Keeton, executive vice president and general manager, Power Solutions Group, onsemi. “Together with our end-to-end SiC manufacturing capabilities, onsemi offers the technology and supply assurance to meet the needs of industrial energy infrastructure and industrial drive providers.”

Renewable energy applications are consistently moving to higher voltages with solar systems from 1100 V to 1500 V DC Buses. To support this change, customers require MOSFETs with a higher BV. The new 1700 V EliteSiC MOSFET offers a maximum Vgs range of -15 V/25 V, making it suitable for fast switching applications where gate voltages are increasing to -10V, delivering increased system reliability.

At a test condition of 1200 V at 40 Amps, the 1700 V EliteSiC MOSFET achieves a gate charge (Qg) of 200 nC – which is market-leading compared to equivalent competitive devices that are closer to 300 nC. A low Qg is critical to achieving high efficiency in fast switching, high-power renewable energy applications.

At a BV rating of 1700 V, the EliteSiC Schottky diode devices offer improved margin between the maximum reverse voltage (VRRM) and the peak repetitive reverse voltage of the diode. The new devices also provide excellent reverse leakage performance with a maximum reverse current (IR) of just 40 µA at 25°C and 100 µA at 175°C – significantly better than competitive devices that are often rated at 100 µA at 25°C.

Learn more about onsemi EliteSiC solutions at onsemi.com or visit us at CES 2023, in Las Vegas, NV, January 5-8.

オンセミ (onsemi) について

オンセミ (Nasdaq: ON) は、より良い未来を築くために、破壊的なイノベーションを推進しています。当社は、自動車と産業用エンドマーケットに注力し、自動車の電動化と安全性、持続可能なエネル ギーグリッド、産業オートメーション、5G およびクラウドインフラなどのメガトレンドにおける変化を加速させています。オンセミは、高度に差別化された革新的な製品ポートフォリオにより、世界の最も複雑な課題を 解決するインテリジェントなパワーおよびセンシングのテクノロジを創出し、より安全でクリーンでスマートな世界を 実現する方法をリードしています。オンセミは Fortune 500® 企業として認められ、また S&P 500® インデックスに含まれています。オンセミの詳細については、www.onsemi.jpをご覧ください。

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オンセミおよびオンセミのロゴは、Semiconductor Components Industries, LLC.の登録商標です。 本ドキュメントに掲載されているその他のブランド名および製品名は、それぞれの所有者の登録商標または商標です。 本ニュースリリースでは、当社のウェブサイトを参照していますが、ウェブサイト上の情報はここには記載されていません。

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