MOSFETs | CPH3356

Single P-Channel Power MOSFET, -20V, -2.5A, 137mΩ

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Overview

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.

  • Load Switch
  • Motor Driver
  • White goods, Game, Mobile Scanner, Recorder, Ink Jet Printer
  • 1.8V Drive
  • Low On-Resistance
  • ESD Diode - Protected Gate
  • RoHS Compliance

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

CPH3356-TL-H

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Obsolete

CAD Model

Pb

A

H

P

CPH-3

318BA

1

260

REEL

3000

N

-20

-

P-Channel

Single

10

1.4

-2.5

1

203

137

4.7

3.3

250

Price N/A

More Details

CPH3356-TL-W

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Last Shipments

CAD Model

Pb

A

H

P

CPH-3

318BA

1

260

REEL

3000

N

-20

-

P-Channel

Single

10

1.4

-2.5

1

203

137

4.7

3.3

250

Price N/A

More Details

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