NXH80B120L2Q0: パワー・インテグレーテッド・モジュール、デュアル・ブースト、1200 V、40 A IGBT + 1200 V、30 A Si ダイオード
NXH80B120L2Q0SG は、2 つの 40A/1200V IGBT、2 つの 30A/1200V シリコン・ダイオード、 2 つの IGBT 用 25A/1600V 逆並列ダイオードで構成されるデュアル・ブースト・ステージを含むパワー・モジュールです。突入電流制限に使用される追加の 25A/1600V バイパス・レクティファイヤが 2 つ含まれます。オンボード・サーミスタが含まれます。
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IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2830 uJ
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Fast IGBT with low VCE(SAT) for high efficiency
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25 A / 1600 V Bypass and Anti−parallel Diodes
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Low VF bypass diodes for excellent efficiency in bypass mode
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Si Rectifier Specification: VF = 2.4 V, IRRM = 53 A
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Si Diode for moderate speed switching
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Dual Boost 40 A / 1200 V IGBT + Si Rectifier Module
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アプリケーション |
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最終製品 |
- Solar Inverter Boost Stage
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製品番号 :
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