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NTBG080N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, D2PAK−7L

Datasheet: MOSFET - SiC Power, Single N-Channel, D2PAK-7L
Rev. 1 (234kB)
製品概要
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • Low On Resistance
 
  • RDSson = 80mΩ typ
  • High Junction Temperature
 
  • Tj = 175C
  • Ultra Low Gate Charge
   
  • Low Effective Output Capacitance
   
  • This device is RoHS Compliant
   
アプリケーション   最終製品
  • DC-DC Converter
  • Boost Inverter
  • UPS
 
  • Solar
  • Charging Station
  • Motor Drive
技術資料 & デザイン・リソース
シミュレーション・モデル (3) データシート (1)
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NTBG080N120SC1 Active
Pb-free
Halide free
NTBG080N120SC1 D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $5.9999
マーケットリードタイム(週) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 4,000

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTBG080N120SC1  
 $5.9999 
Pb
H
 Active   
N-Channel
Single
1200
30
80
56
79
175
D2PAK7 (TO-263-7L HV)
Case Outline
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