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NTHL020N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, TO247−3L

Datasheet: MOSFET - SiC Power, Single N-Channel
Rev. 0 (228kB)
製品概要
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
 
  • Typical RDS(on) = 20mΩ
  • High Speed Switching and Low Capacitance
 
  • Coss = 260pF
  • 1200V
   
  • 100% UIL Tested
   
アプリケーション   最終製品
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Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NTHL020N120SC1 Active
Pb-free
Halide free
NTHL020N120SC1, Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?3L TO-247-3LD 340CX NA Tube 450 $22.6408
マーケットリードタイム(週) : 8 to 12
ON Semiconductor   (2020-09-02 00:00) : 19,800

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTHL020N120SC1  
 $22.6408 
Pb
H
 Active   
N-Channel
Single
1200
103
20
203
260
175
TO-247-3LD
Case Outline
340CX   
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