NTHL020N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, TO247−3L
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
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技術資料 & デザイン・リソース
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| NTHL020N120SC1 | Active |
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NTHL020N120SC1, Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?3L | TO-247-3LD | 340CX | NA | Tube | 450 | $18.1126 | |||||||||
| マーケットリードタイム(週) | : | Contact Factory |
| ON Semiconductor (2020-09-02 00:00) | : | 19,800 |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTHL020N120SC1
$18.1126
Pb
A
H
P
Active
N-Channel
Single
1200
103
20
203
260
175
TO-247-3LD
Case Outline
340CX
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